MRF6P21190HR6_10 Datasheet, PDF (1/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ = 1900 mA,
P_out = 44 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
Document Number: MRF6P21190HR6
Rev. 5,12/2010
MRF6P21190HR6
2110--2170 MHz, 44 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
V_GS
T_stg
T_C
T_J
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 72°C, 44 W CW
R_θJC
0.25
0.27
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2004--2006, 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
1