MRF1535NT1_06 Datasheet, PDF (9/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 5. Common Source Scattering Parameters (V_DD = 12.5 Vdc)
I_DQ = 250 mA
f
MHz
50
S₁₁
|S₁₁|
∠φ
0.89
- 173
S₂₁
|S₂₁|
∠φ
8.496
83
100
0.90
- 175
3.936
72
150
0.91
- 175
2.429
63
200
0.92
- 175
1.627
57
250
0.94
- 176
1.186
53
300
0.95
- 176
0.888
49
350
0.96
- 176
0.686
48
400
0.96
- 176
0.568
44
450
0.97
- 176
0.457
44
500
0.97
- 176
0.394
44
550
0.98
- 176
0.332
42
600
0.98
- 177
0.286
41
f
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S₁₁
|S₁₁|
∠φ
0.90
- 173
0.90
- 175
0.91
- 175
0.92
- 175
0.94
- 176
0.95
- 176
0.96
- 176
0.96
- 176
0.97
- 176
0.97
- 176
0.98
- 176
0.98
- 177
|S₂₁|
8.49
3.92
2.44
1.62
1.19
0.89
0.69
0.57
0.46
0.39
0.33
0.28
I_DQ = 1.0 A
S₂₁
∠φ
83
72
63
57
53
48
48
44
44
44
41
41
f
MHz
50
100
150
200
250
300
350
400
450
500
550
600
S₁₁
|S₁₁|
∠φ
0.94
- 176
0.94
- 178
0.94
- 178
0.94
- 178
0.95
- 178
0.95
- 178
0.95
- 178
0.96
- 178
0.96
- 178
0.96
- 177
0.97
- 177
0.97
- 178
|S₂₁|
9.42
4.56
2.99
2.14
1.67
1.32
1.08
0.93
0.78
0.68
0.59
0.51
I_DQ = 2.0 A
S₂₁
∠φ
88
82
78
74
71
67
67
63
62
61
58
57
S₁₂
|S₁₂|
∠φ
0.014
- 26
0.014
- 14
0.011
- 23
0.010
- 44
0.007
- 16
0.005
- 44
0.005
36
0.005
-1
0.004
49
0.003
- 51
0.001
31
0.013
99
S₁₂
|S₁₂|
∠φ
0.006
- 39
0.009
-5
0.006
7
0.008
21
0.006
8
0.008
3
0.007
48
0.004
41
0.004
43
0.003
57
0.006
62
0.009
96
S₁₂
|S₁₂|
∠φ
0.005
- 72
0.005
4
0.003
7
0.005
17
0.004
40
0.007
35
0.005
57
0.003
50
0.007
68
0.004
99
0.008
78
0.009
92
S₂₂
|S₂₂|
∠φ
0.76
- 170
0.79
- 170
0.82
- 170
0.86
- 170
0.88
- 170
0.91
- 171
0.92
- 170
0.94
- 171
0.94
- 172
0.95
- 171
0.95
- 173
0.94
- 173
S₂₂
|S₂₂|
∠φ
0.86
- 176
0.86
- 176
0.87
- 176
0.88
- 175
0.89
- 174
0.89
- 174
0.91
- 174
0.93
- 173
0.93
- 173
0.94
- 173
0.94
- 174
0.93
- 173
S₂₂
|S₂₂|
∠φ
0.89
- 177
0.89
- 177
0.89
- 177
0.90
- 176
0.90
- 175
0.91
- 175
0.92
- 174
0.93
- 173
0.93
- 173
0.94
- 173
0.93
- 175
0.92
- 174
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
9