MRF1535NT1_06 Datasheet, PDF (4/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS, 135 - 175 MHz
19
18
17
16
15
14
13
12
11
10
V_DD = 12.5 Vdc
155 MHz
175 MHz
135 MHz
20
30
40
50
60
P_out, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
80
155 MHz
70
60
175 MHz
135 MHz
50
40
V_DD = 12.5 Vdc
30
10
20
30 40
50
60
70 80
P_out, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
50
45
155 MHz
175 MHz
40
135 MHz
35
30
200
400
V_DD = 12.5 Vdc
P_in = 30 dBm
600
800
1000
1200
I_DQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
80
155 MHz
70
175 MHz
60
135 MHz
50
40
200
400
V_DD = 12.5 Vdc
P_in = 30 dBm
600
800
1000
1200
I_DQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus Biasing Current
70
60
155 MHz
50
175 MHz
135 MHz
40
30
20
10
10
11
12
I_DQ = 250 mA
P_in = 30 dBm
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
80
135 MHz
70
175 MHz
60
155 MHz
50
I_DQ = 250 mA
P_in = 30 dBm
40
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1535NT1 MRF1535FNT1
4
RF Device Data
Freescale Semiconductor