MRF1535NT1_06 Datasheet, PDF (13/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

B
E1
2X P
aaa M D A B
A
E2
4X b2
4
aaa M D A
2X b1
5
aaa M D A
6
4X
D1
b3
aaa M D A
1
2
3
DRAIN ID
D D2
4X
e
6
5
4
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DRAIN ID
NOTE 5
3
2
1
bbb C A B
c1
D
SEATING
PLANE
Y
E
A
F
ZONE "J"
Y
A1
6 ^A2
STYLE 1:
PIN 1. SOURCE (COMMON)
2. DRAIN
3. SOURCE (COMMON)
4. SOURCE (COMMON)
5. GATE
6. SOURCE (COMMON)
CASE 1264A - 02
ISSUE C
TO - 272- 6
PLASTIC
MRF1535FNT1
VIEW Y - Y
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.006 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
4. DIMENSIONS b1 AND b3 DO NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS
OF THE b1 AND b2 DIMENSIONS AT MAXIMUM
MATERIAL CONDITION.
5. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
6. DIMENSION A2 APPLIES WITHIN ZONE J ONLY.
INCHES
DIM MIN MAX
A 0.098 0.106
A1 0.038 0.044
A2 0.040 0.042
D 0.926 0.934
D1 0.810 BSC
D2 0.608 BSC
E 0.492 0.500
E1 0.246 0.254
E2 0.170 BSC
F
0.025 BSC
P 0.126 0.134
b1 0.193 0.199
b2 0.078 0.084
b3 0.088 0.094
c1 0.007 0.011
e
0.193 BSC
aaa
0.004
bbb
0.008
MILLIMETERS
MIN MAX
2.49 2.69
0.96 1.12
1.02 1.07
23.52 23.72
20.57 BSC
15.44 BSC
12.50 12.70
6.25 6.45
4.32 BSC
0.64 BSC
3.20 3.40
4.90 5.05
1.98 2.13
2.24 2.39
0.178 0.279
4.90 BSC
0.10
0.20
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
13