MC33897CTEFR2 Datasheet, PDF (9/19 Pages) Freescale Semiconductor, Inc – Single Wire CAN Transceiver

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions of -40 °C ≤ T_A ≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS
Normal Speed Rising Output Delay
200 Ω ≤ R_L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD = V_IL to V_BUS as follows:
Max Time to V_BUSMOD = 3.7 V, 6.0 V ≤ V_BATT ≤ 26.5 V ⁽¹⁰⁾
Min Time to V_BUSMOD = 1.0 V, 6.0 V ≤ V_BATT ≤ 26.5 V ⁽¹⁰⁾
Max Time to V_BUSMOD = 2.7 V, V_BATT = 5.0 V ⁽¹⁰⁾
Min Time to V_BUSMOD = 1.0 V, V_BATT = 5.0 V ⁽¹⁰⁾
t _DLYNORMRO
2.0
–
Normal Speed Falling Output Delay
200 Ω ≤ R_L ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD = V_IH to V_BUS as follows:
Max Time to V_BUSMOD = 1.0 V, 6.0 V ≤ V_BATT ≤ 26.5 V ⁽¹⁰⁾
Min Time to V_BUSMOD = 3.7 V, 6.0 V ≤ V_BATT ≤ 26.5 V ⁽¹⁰⁾
Max Time to V_BUSMOD = 1.0 V, V_BATT = 5.0 V ⁽¹⁰⁾
Min Time to V_BUSMOD = 2.7 V, V_BATT = 5.0 V ⁽¹⁰⁾
t _DLYNORMFO
1.8
–
High Speed Rising Output Delay
75 Ω ≤ R_L ≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,
8.0 V ≤ V_BATT ≤ 16 V
Measured from TXD = V_IL to V_BUS as follows:
Max Time to V_BUS = 3.7 V ⁽¹¹⁾
Min Time to V_BUS = 1.0 V ⁽¹¹⁾
t _DLYHSRO
0.1
–
High Speed Falling Output Delay
75 Ω ≤ R_L ≤ 135 Ω, 0.0 μs ≤ Load Time Constants ≤ 1.5 μs,
8.0 V ≤ V_BATT ≤ 16 V
Measured from TXD = V_IH to V_BUS as follows:
Max Time to V_BUS = 1.0 V ⁽¹¹⁾
Min Time to V_BUS = 3.7 V ⁽¹¹⁾
t _DLYHSFO
0.04
–
Notes
10. V_BUSMOD is the voltage at the BUSMOD node in Figure 6, page 13.
11. V_BUS is the voltage at the BUS pin in Figure 7, page 14.
μs
6.3
μs
8.5
μs
1.7
μs
3.0
Analog Integrated Circuit Device Data
Freescale Semiconductor
33897
9