English
Language : 

MC33897CTEFR2 Datasheet, PDF (10/19 Pages) Freescale Semiconductor, Inc – Single Wire CAN Transceiver
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions of -40 °C ≤ TA ≤ 125 °C, unless otherwise stated. Voltages are relative to GND unless
otherwise noted. All positive currents are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
BUS (CONTINUED)
High Voltage Rising Output Delay
200 Ω ≤ RL ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs
Measured from TXD=VIL to VBUS as follows:
Max Time to VBUSMOD = 3.7 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Min Time to VBUSMOD = 1.0 V, 6.0 V ≤ VBATT ≤ 26.5 V (12)
Max Time to VBUSMOD = 9.4 V, 12.0 V ≤ VBATT ≤ 26.5 V (12)
High Voltage Falling Output Delay
200 Ω ≤ RL ≤ 3332 Ω, 1.0 μs ≤ Load Time Constants ≤ 4.0 μs,
12.0 V ≤ VBATT ≤ 26.5 V
Measured from TXD=VIH to VBUS as follows:
Max Time to VBUSMOD = 1.0 V (12)
Min Time to VBUSMOD = 3.7 V (12)
t DLYHVRO
μs
2.0
–
6.3
2.0
–
6.3
2.0
–
18
t DLYHVFO
μs
1.8
–
14
1.8
–
14
RECEIVER RXD
Receive Delay Time (5.0 V ≤ VBATT ≤ 26.5 V)
Awake
t RDLY
0.2
Receive Delay Time (BUS Rising to RXD Falling, 5.0 V ≤ VBATT ≤ 26.5 V)
t RDLYSL
Sleep
10
CNTL
CNTL Falling Delay Time (5.0 V ≤ VBATT ≤ 26.5 V)
t CNTLFDLY
300
Notes
12. VBUSMOD is the voltage at the BUSMOD node in Figure 6, page 13.
μs
–
1.0
μs
–
70
–
1000
ms
33897
10
Analog Integrated Circuit Device Data
Freescale Semiconductor