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| MRF8P23080HR3 Datasheet, PDF (8/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs | |||
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f
MHz
VDD = 28 Vdc, IDQA = 280 mA
Max Pout (1)
Watts dBm
Zsource
â¦
Zload
â¦
2300
58
47.6
8.42 -- j14.3 3.51 -- j5.02
2350
55
47.4
11.4 -- j13.4 3.75 -- j5.03
2400
55
47.4
17.7 -- j9.34 3.14 -- j5.63
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z source
Z load
Figure 11. Carrier Side Load Pull Performance â Maximum P1dB Tuning
f
MHz
VDD = 28 Vdc, IDQA = 280 mA
Max Eff. (1)
%
Zsource
â¦
Zload
â¦
2300
60.9
8.41 -- j14.3
7.02 -- j3.44
2350
60.1
11.4 -- j13.4
6.84 -- j2.41
2400
60.0
17.7 -- j9.35
6.53 -- j2.92
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z source
Z load
Figure 12. Carrier Side Load Pull Performance â Maximum Efficiency Tuning
MRF8P23080HR3 MRF8P23080HSR3
8
RF Device Data
Freescale Semiconductor
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