MRF8P23080HR3 Datasheet, PDF (2/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 72°C, 16 W CW, 28 Vdc, I_DQA = 280 mA, V_GSB = 0.7 V, 2300 MHz
Case Temperature 80°C, 80 W CW⁽³⁾, 28 Vdc, I_DQA = 280 mA, V_GSB = 0.7 V, 2300 MHz
R_θJC
0.89
0.55
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽⁴⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics ⁽⁴⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 75 μAdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
V_GS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_DA = 280 mAdc, Measured in Functional Test)
V_GS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 0.75 Adc)
V_DS(on)
0.1
0.23
0.3
Vdc
Functional Tests ^(5,6) (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQA = 280 mA, V_GSB = 0.7 Vdc, P_out = 16 W Avg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
on 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G_ps
13.5
14.6
18.5
dB
Drain Efficiency
η_D
38.0
42.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.7
—
dB
Adjacent Channel Power Ratio
ACPR
—
--29.5
--27.0
dBc
Typical Broadband Performance ⁽⁶⁾ (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQA = 280 mA, V_GSB = 0.7 Vdc,
P_out = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
G_ps
(dB)
η_D
Output PAR
ACPR
(%)
(dB)
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration
(continued)
MRF8P23080HR3 MRF8P23080HSR3
2
RF Device Data
Freescale Semiconductor