MRF8P23080HR3 Datasheet, PDF(3/15 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF8P23080HR3 Datasheet, PDF (3/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc,

2300--2400 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

Pout @ 3 dB Compression Point, CW

P3dB

100

IMD Symmetry @ 20 W PEP, Pout where IMD Third Order

Intermodulation ï 30 dBc

IMDsym

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

Gain Flatness in 100 MHz Bandwidth @ Pout = 16 W Avg.

Gain Variation over Temperature

(--30Â°C to +85Â°C)

0.1

âG

0.013

Output Power Variation over Temperature

(--30Â°C to +85Â°C) (2)

âP1dB

0.005

1. Measurement made with device in a Symmetrical Doherty configuration.

2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

Unit

MHz

dB/Â°C

RF Device Data

Freescale Semiconductor

MRF8P23080HR3 MRF8P23080HSR3

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