MRF7S35015HSR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_source
f = 3100 MHz
f = 3500 MHz
Z_load
f = 3500 MHz
f = 3100 MHz
Z_o = 50 Ω
V_DD = 32 Vdc, I_DQ = 50 mA, P_out = 15 W Peak
f
MHz
Z_source
W
Z_load
W
3100
48.6 + j16.1
5.6 - j5.2
3300
11.8 + j3.15
6.36 - j6.83
3500
6.43 - j6.79
7.41 - j15.5
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S35015HSR3
8
RF Device Data
Freescale Semiconductor