MRF7S35015HSR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
1000
10
100
C_oss
C_iss
10
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
1
C_rss
0.1
0
5
10
15
20
25
30
35
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
T_J = 200°C
T_J = 175°C
T_J = 150°C
1
T_C = 25°C
0.1
1
10
100
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
17
16.5 _Gps
16
f = 3500 MHz
50
3100 MHz
3300 MHz 45
3500 MHz ₄₀
15.5
3300 MHz
35
15
30
14.5 3100 MHz
η_D
25
14
13.5
13
2
V_DD = 32 Vdc, I_DQ = 50 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
10
20
15
10
30
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
47
P3dB = 43 dBm (19.8 W)
Ideal
46
45
P2dB = 42.7 dBm (19 W)
44
43 ^{P1dB = 42.2 dBm (16.7 W)}
42
Actual
41
40
39
V_DD = 32 Vdc, I_DQ = 50 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
38
21 22 23 24 25 26 27 28 29 30
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
20
19
I_DQ = 300 mA
18
150 mA
17
100 mA
16
50 mA
15
14 ^VDD ^{= 32 Vdc, f = 3500 MHz}
Pulse Width = 100 μsec, Duty Cycle = 20%
13
1
10
30
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
17
16
15
14
13
32 V
12
I_DQ = 50 mA, f = 3500 MHz
11 Pulse Width = 100 μsec
Duty Cycle = 20%
10
1
30 V
28 V
26 V
V_DD = 24 V
10
30
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF7S35015HSR3
5