MRF7S35015HSR3 Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
June 2008
Aug. 2008
Description
• Initial Release of Data Sheet
• Added p. 1 of Case 465J - 02 Mechanical Outline drawing, p. 9
RF Device Data
Freescale Semiconductor
MRF7S35015HSR3
11