MRF7S21170HR3_12 Datasheet, PDF (8/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
17
I_DQ = 1400 mA
f = 2140 MHz
16
15
14
V_DD = 24 V
28 V
32 V
13
0
100
200
280
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
W--CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0 1 2 3 4 5 6 7 8 9 10
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
0
--10
3.84 MHz
--20
Channel BW
--30
--40
--50
--60 --ACPR in 3.84 MHz
--70
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
--80
--90
--100
--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3
8
RF Device Data
Freescale Semiconductor, Inc.