MRF7S21170HR3_12 Datasheet, PDF(3/17 Page) Freescale Semiconductor, Inc

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MRF7S21170HR3_12 Datasheet, PDF (3/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TA = 25ï°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth

Video Bandwidth @ 170 W PEP Pout where IM3 = --30 dBc

(Tone Spacing from 100 kHz to VBW)

VBW

ïIMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both

sidebands)

MHz

Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 170 W CW

Average Group Delay @ Pout = 170 W CW, f = 2140 MHz

Part--to--Part Insertion Phase Variation @ Pout = 170 W CW

f = 2140 MHz, Six Sigma Window

0.4

1.95

ï°

Delay

1.7

ïï

ï°

Gain Variation over Temperature

(--30ï°C to +85ï°C)

ïG

0.015

dB/ï°C

Output Power Variation over Temperature

(--30ï°C to +85ï°C)

ïP1dB

0.01

dB/ï°C

1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

RF Device Data

Freescale Semiconductor, Inc.

MRF7S21170HR3 MRF7S21170HSR3

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