MRF7S21170HR3_12 Datasheet, PDF (1/17 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used
in Class AB and Class C for PCN--PCS/cellular radio and WLL applications.

Typical Single--Carrier W--CDMA
1C4h0a0nnmeAl ,BPan_oudtw=id5t0h
Watts Avg., f
= 3.84 MHz,
=Pe2r1fo6r7m.5anMcHe:z,VI^DQ^DM=a2g8nVituodltes,CI^Dli^Qpp=ing,
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
 Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW Output
Power
 P_out @ 1 dB Compression Point ≃ 170 Watts CW
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Document Number: MRF7S21170H
Rev. 7, 2/2012
MRF7S21170HR3
MRF7S21170HSR3
2110--2170 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF7S21170HR3
CASE 465C--03
NI--880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
V_DSS
--0.5, +65
Vdc
V_GS
--6.0, +10
Vdc
V_DD
32, +0
Vdc
T_stg
-- 65 to +150
C
T_C
150
C
T_J
225
C
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 170 W CW
Case Temperature 73C, 25 W CW
R_JC
0.31
0.36
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2006--2008, 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
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