MRF7S21170HR3_07 Datasheet, PDF (8/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
17
10⁸
I_DQ = 1400 mA
f = 2140 MHz
16
10⁷
15
14
V_DD = 24 V
28 V _{32 V}
13
0
100
200
280
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 50 W Avg., and η_D = 31%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Compressed Output
0.1
Signal @ 50 W P_out
Input Signal
0.01
0.001
0.0001
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0
2
4
6
8
10
PEAK −TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
− 10
3.84 MHz
− 20
Channel BW
− 30
− 40
− 50
− 60
− 70
− 80
− 90
−ACPR in 3.84 MHz
Integrated BW
− 100
−ACPR in 3.84 MHz
Integrated BW
− 110
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21170HR3 MRF7S21170HSR3
8
RF Device Data
Freescale Semiconductor