MRF7S21170HR3_07 Datasheet, PDF (12/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
Date
May 2006
June 2006
Aug. 2006
Sept. 2006
May 2007
Description
• Initial Release of Data Sheet
• Added Class C to description of parts, pg. 1
• Changeded “≥” to “ - ” in the Device Output Signal Par bullet, pg. 1
• Changed typ value from ±9 to 18 in Part - to - Part Phase Variation characteristic description in Table 4,
Typical Performances, p. 2
• Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
• Added Greater Negative Source bullet to Features section, p. 1
• Corrected Fig. 14, Single - Carrier W - CDMA Spectrum, to 3.84 MHz, p. 7
• Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
• Added “Insertion” to Part - to - Part Phase Variation characteristic description in Table 4, Typical
Performances, p. 2
• Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
Performances, p. 2
• Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
• Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
and Values, p. 3
• Added Figure 10, Digital Predistortion Correction, p. 6
• Corrected Fig. 15, Single - Carrier W - CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
• Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
• Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
• Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard,
p. 1
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V_GS(Q),
and added Fixture Gate Quiescent Voltage, V_GG(Q) to On Characteristics table, p. 2
• Updated verbiage in Typical Performances table, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 7
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 8
• Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal,
updated to include output power level at functional test, p. 8
MRF7S21170HR3 MRF7S21170HSR3
12
RF Device Data
Freescale Semiconductor