|
MRF7S21170HR3_07 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
|
◁ |
TYPICAL CHARACTERISTICS
â 10
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
â20 Two âTone Measurements, 10 MHz Tone Spacing
â 30
â 40
3rd Order
â 50
â 60
1
5th Order
7th Order
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA
â10 Two âTone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
â 20
IM3 âL
â 30
IM3 âU
â 40
IM5 âU
â 50
IM5 âL IM7 âU IM7 âL
â 60
1
10
100
TWO âTONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
54
0
Ideal 48
â1
42
â1 dB = 43.335 W
â2
36
â2 dB = 61.884 W
â3
30
â3 dB = 83.111 W
Actual
â4
24
VDD = 28 Vdc, IDQ = 1400 mA
f = 2140 MHz, Input PAR = 7.5 dB
â5
18
20
40
60
80
100
120
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
â 20
VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz
Single âCarrier WâCDMA, PAR = 7.5 dB, ACPR @
â30 "5 MHz Offset in 3.84 MHz Integrated Bandwidth
Uncorrected, Upper and Lower
â 40
DPD Corrected
No Memory Correction
â 50
â 60
DPD Corrected, with Memory Correction
â 70
40 41 42 43 44 45 46 47 48 49 50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
18 Gps
17
16
TC = â30_C
25_C
85_C
60
â 30_C
25_C
50
85_C
40
30
15
20
14
ηD
13
1
VDD = 28 Vdc
IDQ = 1400 mA
f = 2140 MHz
10
100
10
0
400
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
7
|
▷ |