MRF7S21170HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

f = 2220 MHz
Z_load
f = 2060 MHz
Z_o = 10 Ω
Z_source
f = 2220 MHz
f = 2060 MHz
V_DD = 28 Vdc, I_DQ = 1400 mA, P_out = 50 W Avg.
f
MHz
Z_source
W
Z_load
W
2060
4.57 - j10.70
1.02 - j3.54
2080
4.57 - j10.38
0.99 - j3.34
2100
4.57 - j10.06
0.96 - j3.14
2120
4.52 - j9.72
0.93 - j2.94
2140
4.40 - j9.42
0.92 - j2.76
2160
4.15 - j9.12
0.91 - j2.59
2180
4.44 - j8.82
0.89 - j2.42
2200
4.19 - j8.53
0.88 - j2.25
2220
4.12 - j8.23
0.88 - j2.09
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21170HR3 MRF7S21170HSR3
8
RF Device Data
Freescale Semiconductor