MRF7S21170HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

TYPICAL CHARACTERISTICS
17
36
16 ^Gps
34
15
32
14 ^ηD
30
V_DD = 28 Vdc, P_out = 50 W (Avg.), I_DQ = 1400 mA
13
Single−Carrier W−CDMA, 3.84 MHz Channel
28
−5
IRL _{Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)}
12
0
−10
11
PARC
10
−1
−15
−2
−20
9
−3
−25
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 50 Watts Avg.
17
44
16
42
G_ps
15
40
14 ηD
38
V_DD = 28 Vdc, P_out = 84 W (Avg.), I_DQ = 1400 mA
13
Single−Carrier W−CDMA, 3.84 MHz Channel
36
−5
IRL
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
12
−2
−10
11
−3
−15
10
PARC
−4
−20
9
−5
−25
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 84 Watts Avg.
18
I_DQ = 2100 mA
17
1750 mA
16 1400 mA
15 ^{1050 mA}
14 ^{700 mA}
13
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
I_DQ = 700 mA
−40
2100 mA
1400 mA
−50
1750 mA
−60
1
1050 mA
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
5