MRF7S21170HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1400 mA
f1 = 2135 MHz, f2 = 2145 MHz
−20 _{Two−Tone Measurements, 10 MHz Tone Spacing}
−30
−40
3rd Order
−50
−60
1
5th Order
7th Order
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
0
−5 ^VDD ^{= 28 Vdc, P}out ^{= 170 W (PEP), I}DQ ^{= 1400 mA}
−10
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−15
−20
−25
IM3−L
−30
IM3−U
−35
−40
IM5−U
−45
IM5−L
−50
−55
IM7−U IM7−L
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
54
0
Ideal ₄₈
−1
42
−1 dB = 43.335 W
−2
36
−2 dB = 61.884 W
−3
30
−3 dB = 83.111 W
Actual
−4
24
V_DD = 28 Vdc, I_DQ = 1400 mA
f = 2140 MHz, Input PAR = 7.5 dB
−5
18
20
40
60
80
100
120
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
−20
V_DD = 28 Vdc, I_DQ = 1400 mA, f = 2140 MHz
Single−Carrier W−CDMA, PAR = 7.5 dB, ACPR @
−30 ^{5 MHz Offset in 3.84 MHz Integrated Bandwidth}
Uncorrected, Upper and Lower
−40
DPD Corrected
No Memory Correction
−50
−60
DPD Corrected, with Memory Correction
−70
40 41 42 43 44 45 46 47 48 49 50
P_out, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
19
18 ^Gps
17
16
T_C = −30_C
25_C
85_C
60
−30_C
25_C
50
85_C
40
30
15
20
14
η_D
13
1
V_DD = 28 Vdc
I_DQ = 1400 mA
f = 2140 MHz
10
100
10
0
400
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21170HR3 MRF7S21170HSR3
6
RF Device Data
Freescale Semiconductor