MRF6S9060NR1 Datasheet, PDF (8/18 Pages) Fairchild Semiconductor – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
22
21.5 ^TC ^{= −30_C}
G_ps
21
25_C
20.5
85_C
20
80
−30_C
70
25_C
60
85_C
50
40
19.5
30
19
η_D
18.5
18
1
V_DD = 28 Vdc
I_DQ = 450 mA
f = 880 MHz
10
20
10
0
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
22
21
20
19
18
32 V
28 V
17
V_DD = 24 V
16
15
14
13
I_DQ = 450 mA
12
f = 880 MHz
11
10
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 14 W Avg., and η_D = 32.1%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9060NR1 MRF6S9060NBR1
8
RF Device Data
Freescale Semiconductor