MRF6S9060NR1 Datasheet, PDF (1/18 Pages) Fairchild Semiconductor – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9060NBR1 no longer manufactured.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, V_DD = 28 Volts,
I_DQ = 450 mA, P_out = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 500 mA,
P_out = 21 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: V_DD = 28 Volts, I_DQ = 500 mA, P_out = 60 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Document Number: MRF6S9060N
Rev. 4, 8/2008
MRF6S9060NR1
MRF6S9060NBR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9060NR1
CASE 1337 - 04, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
V_DSS
- 0.5, +68
Vdc
Gate - Source Voltage
V_GS
- 0.5, + 12
Vdc
Storage Temperature Range
T_stg
- 65 to +150
°C
Case Operating Temperature
T_C
150
°C
Operating Junction Temperature ^(1,2)
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1
1