MRF6S9060NR1 Datasheet, PDF (6/18 Pages) Fairchild Semiconductor – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
22
V_DD = 28 Vdc, P_out = 14 W (Avg.), I_DQ = 450 mA
21.8
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
40
η_D ³⁵
21.6
G_ps
21.4
21.2
30
−45
−8
ACPR
−50
−12
IRL
21
−55
−16
20.8
−60
−20
ALT1
20.6
−65
−24
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P_out = 14 Watts Avg.
21.6
50
V_DD = 28 Vdc, P_out = 28 W (Avg.), I_DQ = 450 mA
21.4 N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
48
8 Through 13
η_D
21.2
46
21
G_ps
20.8
20.6
44
−32
−4
ACPR
−40
−8
20.4
IRL
20.2
−48
−12
ALT1 _−56
−16
20
−64
−20
840 850 860 870 880 890 900 910 920
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P_out = 28 Watts Avg.
23
22
I_DQ = 675 mA
550 mA
21 ^{450 mA}
350 mA
20
225 mA
19
18
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
17
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30 I_DQ = 225 mA
−40 _{350 mA}
−50
−60
1
450 mA
550 mA
10
675 mA
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9060NR1 MRF6S9060NBR1
6
RF Device Data
Freescale Semiconductor