MRF6S9045NR1 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
24
23 ^{TC = −30_C}
G_ps
22
25_C
21
85_C
−30_C
80
70
25_C
60
85_C
50
20
40
19
30
18
η_D
17
16
1
V_DD = 28 Vdc
I_DQ = 350 mA
f = 880 MHz
10
20
10
0
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
23.5
23
22.5
22
21.5
21
20.5
20
19.5
19
18.5 ^{VDD = 12 V} _{16 V 20 V}
18
17.5
0 10 20 30 40
32 V
28 V
24 V
I_DQ = 350 mA
f = 880 MHz
50 60 70 80 90 100
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁹
10⁸
10⁷
10⁶
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9045NR1 MRF6S9045NBR1
8
RF Device Data
Freescale Semiconductor