MRF6S9045NR1 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 910 MHz
Z_source
f = 850 MHz
Z_o = 5 Ω
f = 850 MHz
Z_load
f = 910 MHz
V_DD = 28 Vdc, I_DQ = 350 mA, P_out = 10 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
850
0.42 + j0.30
3.05 + j1.27
865
0.42 + j0.44
3.16 + j1.33
880
0.45 + j0.60
3.31 + j1.33
895
0.48 + j0.74
3.43 + j1.20
910
0.50 + j0.85
3.35 + j1.05
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9045NR1 MRF6S9045NBR1
10
RF Device Data
Freescale Semiconductor