MRF6S9045NR1 Datasheet, PDF (3/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
V_DD = 28 Vdc, I_DQ = 350 mA, P_out = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
G_ps
—
20
—
dB
Drain Efficiency
η_D
—
46
—
%
Error Vector Magnitude
EVM
—
1.5
—
%
Spectral Regrowth at 400 kHz Offset
SR1
—
- 62
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) V_DD = 28 Vdc,
I_DQ = 350 mA, P_out = 45 W, f = 921 - 960 MHz
Power Gain
G_ps
—
20
—
dB
Drain Efficiency
η_D
—
68
—
%
Input Return Loss
IRL
—
- 12
—
dB
P_out @ 1 dB Compression Point
(f = 940 MHz)
P1dB
—
52
—
W
RF Device Data
Freescale Semiconductor
MRF6S9045NR1 MRF6S9045NBR1
3