MRF6S23100HR3_06 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2400 MHz
Z_load
f = 2300 MHz
f = 2300 MHz
Z_source
f = 2400 MHz
Z_o = 25 Ω
V_DD = 28 Vdc, I_DQ = 1000 mA, P_out = 20 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2300
2310
2320
2330
2340
2350
2360
2370
2380
2390
2400
12.20 - j6.20
12.06 - j6.40
11.91 - j6.56
11.76 - j6.71
11.60 - j6.86
11.44 - j7.00
11.27 - j7.13
11.10 - j7.22
10.92 - j7.34
10.73 - j7.46
10.55 - j7.53
2.06 - j4.69
2.04 - j4.62
2.02 - j4.55
2.01 - j4.48
1.99 - j4.42
1.97 - j4.35
1.96 - j4.28
1.94 - j4.22
1.93 - j4.15
1.91 - j4.09
1.90 - j4.02
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S23100HR3 MRF6S23100HSR3
8
RF Device Data
Freescale Semiconductor