MRF6S23100HR3_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16
25.4
η_{D VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 1000 mA}
15.8
2−Carrier W−CDMA, 10 MHz Carrier Spacing
24.8
15.6
24.2
15.4
G_ps
23.6
15.2
3.84 MHz Channel Bandwidth
−35
−12
15
IM3 ^{PAR = 8.5 dB @ 0.01% Probability (CCDF)} _−37
−15
14.8
ACPR
IRL
14.6
−39
−18
−41
−21
14.4
−43
−24
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 20 Watts Avg.
15.2
35.5
15.1
η_D
V_DD = 28 Vdc, P_out = 40 W (Avg.), I_DQ = 1000 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
35
15
34.5
14.9
34
14.8
G_ps
14.7
14.6
14.5
35.5
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−25
−12
−27
−14
IM3
−29
−16
14.4
−31
−18
14.3
ACPR
14.2
−33
−20
IRL
−35
−22
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 40 Watts Avg.
18
I_DQ = 1500 mA
17
1250 mA
16
1000 mA
15
750 mA
14
V_DD = 28 Vdc, f1 = 2345 MHz
f2 = 2355 MHz, Two−Tone Measurements
10 MHz Tone Spacing
13
500 mA
12
0.1
1
10
100 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
0
V_DD = 28 Vdc
−10 ^{f1 = 2345 MHz, f2 = 2355 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−20
1500 mA
−30
I_DQ = 500 mA
−40
−50
1250 mA
750 mA
1000 mA
−60
−70
0.1
1
10
100 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
5