MRF6S23100HR3_06 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−15
V_DD = 28 Vdc, P_out = 100 W (PEP), I_DQ = 1000 mA
−20 Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
−25
3rd Order
−30
−35
−40
5th Order
−45
7th Order
−50
−55
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
57
55
P3dB = 51.88 dBm (154.14 W)
53 _{P1dB = 51.18 dBm (131.19 W)}
51
Ideal
Actual
49
V_DD = 28 Vdc, I_DQ = 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
47
32 33 34 35 36 37 38 39 40
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
35
V_DD = 28 Vdc, I_DQ = 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
30 _{2−Carrier W−CDMA}
η_D
T_C = 25_C
10 MHz Carrier Spacing, 3.84 MHz
25 Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
20
G_ps
15
25_C
10
−20
IM3
−25
−30_C
85_C ^−30
−35
25_C
−40
−30_C
−45
85_C
5
ACPR
25_C
−50
0
−55
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
18
70
17
T_C = −30_C
16
25_C
15
85_C
−30_C
60
G_ps
25_C 50
85_C ₄₀
14
30
V_DD = 28 Vdc
13 ^{IDQ = 1000 mA}
20
f = 2350 MHz
η_D
12
10
11
0
0.1
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S23100HR3 MRF6S23100HSR3
6
16
I_DQ = 1000 mA
15
f = 2350 MHz
14
13
12
11 ^{VDD = 12 V}
28 V
20 V
24 V
32 V
16 V
10
0 20 40 60 80 100 120 140 160
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor