MRF6S21050LR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2200 MHz
Z_load
f = 2080 MHz
f = 2200 MHz
Z_o = 25 Ω
Z_source
f = 2080 MHz
V_DD = 28 Vdc, I_DQ = 450 mA, P_out = 11.5 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2080
4.09 - j14.65
2.36 - j7.52
2090
3.74 - j13.95
2.25 - j7.11
2100
3.95 - j13.36
2.40 - j6.78
2110
4.44 - j13.00
2.68 - j6.59
2120
5.03 - j12.89
2.99 - j6.52
2130
5.55 - j13.05
3.26 - j6.64
2140
5.76 - j13.26
3.32 - j6.68
2150
5.57 - j13.70
3.20 - j6.87
2160
4.86 - j13.92
2.82 - j6.93
2170
4.04 - j13.61
2.44 - j6.70
2180
3.69 - j12.91
2.33 - j6.29
2190
3.91 - j12.44
2.49 - j6.05
2200
4.41 - j12.32
2.77 - j5.96
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21050LR3 MRF6S21050LSR3
8
RF Device Data
Freescale Semiconductor