MRF6S21050LR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, P_out = 60 W (PEP), I_DQ = 450 mA
Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 2140 MHz
3rd Order
−30
5th Order
−40
−50 ^{7th Order}
−60
0.01
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
52
51
P3dB = 48.66 dBm (73.43 W)
Ideal
50
P1dB = 47.89 dBm (61.52 W)
49
48
Actual
47
46
V_DD = 28 Vdc, I_DQ = 450 mA
45
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
44
28 29 30 31 32 33 34 35 36
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
40
V_DD = 28 Vdc, I_DQ = 450 mA, f1 = 2135 MHz
35 f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
30 _{Probability (CCDF)}
25
20
G_ps
15
−20
IM3
−25
−30
−35
ACPR
−40
−45
10
−50
5 _ηD
0
0.2
1
10
P_out, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
−55
−60
30
16.5
64
16
G_ps
56
15.5
48
15
40
14.5
32
14
13.5
13
3
η_D
10
V_DD = 28 Vdc
I_DQ = 450 mA
f = 2140 MHz
24
16
8
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21050LR3 MRF6S21050LSR3
6
17
16.5
I_DQ = 450 mA
f = 2140 MHz
16
15.5
15
14.5
14
13.5
13
16 V ^{20 V}
24 V
28 V
32 V
12.5 V_DD = 12 V
12
0 10 20 30 40 50 60 70 80 90 100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor