MRF6S21050LR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16.4
30
η_D
16.3
28
16.2
16.1
V_DD = 28 Vdc, P_out = 11.5 W (Avg.)
I_DQ = 450 mA, 2−Carrier W−CDMA
G_ps
16 ^{10 MHz Carrier Spacing, 3.84 MHz Channel}
Bandwidth, PAR = 8.5 dB @ 0.01%
15.9 _{Probability (CCDF)}
26
24
22
−32
−10
15.8
IRL
−34
−20
15.7 _IM3
15.6
−36
−30
−38
−40
15.5 ACPR
−40
−50
15.4
−42
−60
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 11.5 Watts
16
41
15.9
η_D
40
15.8
39
15.7 V_DD = 28 Vdc, P_out = 23 W (Avg.)
15.6
I_DQ = 450 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel
15.5 ^{Bandwidth, PAR = 8.5 dB @ 0.01%}
Probability (CCDF)
15.4
38
G_ps
37
−24
−10
−26
−15
15.3
IM3
15.2
−28
−20
IRL
−30
−25
15.1 _ACPR
15
−32
−30
−34
−35
2100 2110 2120 2130 2140 2150 2160 2170 2180 2190 2200
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 23 Watts
17.5
I_DQ = 675 mA
17
560 mA
16.5
16
450 mA
15.5
335 mA
15
14.5
14
13.5
0.1
225 mA
V_DD = 28 Vdc, f1 = 2135 MHz
f2 = 2145 MHz, Two−Tone
Measurements, 10 MHz Tone Spacing
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
675 mA
−30
I_DQ = 225 mA
−40
335 mA
−50
−60
0.1
450 mA
560 mA
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
5