MRF6S19120HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2020 MHz
Z_load
f = 1930 MHz
Z_o = 10 Ω
f = 2020 MHz
Z_source
f = 1930 MHz
V_DD = 28 Vdc, I_DQ = 1000 mA, P_out = 19 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
1990
2020
3.03 - j5.14
2.94 - j4.54
2.75 - j4.34
2.75 - j4.18
1.52 - j1.77
1.51 - j1.37
1.38 - j1.20
1.41 - j1.11
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19120HR3 MRF6S19120HSR3
8
RF Device Data
Freescale Semiconductor