MRF6S19120HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 270 μAdc)
V_GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1000 mAdc)
V_GS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2.7 Adc)
V_DS(on)
—
0.21
0.3
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2.7 Adc)
g_fs
—
6.9
—
S
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.95
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1000 mA, P_out = 19 W Avg. N - CDMA, f = 1990 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
14
15
17
dB
Drain Efficiency
η_D
20
21.5
—
%
Adjacent Channel Power Ratio
ACPR
—
- 54
- 48
dBc
Input Return Loss
IRL
—
- 13
-9
dB
1. Part is internally matched both on input and output.
MRF6S19120HR3 MRF6S19120HSR3
2
RF Device Data
Freescale Semiconductor