MRF6S19120HR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
15.6
26
15.4
24
15.2 ηD
22
15
G_ps
V_DD = 28 Vdc, P_out = 19 W (Avg.), I_DQ = 1000 mA 20
Single−Carrier N−CDMA, 1.2288 MHz Channel
14.8
Bandwidth, PAR = 9.8 dB @ 0.01%
−45
−10
IRL _{Probability (CCDF)}
14.6
−12
−50
−14
ACPR
−16
14.4
−55
−18
14.2 ^ALT1
−20
−60
−22
−24
14
−65
−26
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 19 Watts Avg.
15.6
32
15.4
30
η_D
15.2
28
15
26
G_ps
V_DD = 28 Vdc, P_out = 32 W (Avg.), I_DQ = 1000 mA
14.8 _IRL
Single−Carrier N−CDMA, 1.2288 MHz Channel −35
−10
Bandwidth, PAR = 9.8 dB
−12
14.6
@ 0.01% Probability (CCDF)
−40
−14
14.4
ACPR
−16
−45
−18
−20
14.2 ALT1
−50
−22
−24
14
−55
−26
1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 32 Watts Avg.
17
I_DQ = 1500 mA
16
1250 mA
15 1000 mA
750 mA
14
13 _{500 mA}
12
0.6 1
V_DD = 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−20
V_DD = 28 Vdc
−25 ^{f1 = 1988.75 MHz, f2 = 1991.25 MHz}
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
I_DQ = 500 mA
−35
750 mA
1500 mA
−40
−45
1250 mA
−50
−55
0.6 1
1000 mA
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
5