MRF6S19100NR1 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 5 Ω
Z_load
f = 1990 MHz
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Z_source
V_DD = 28 Vdc, I_DQ = 950 mA, P_out = 22 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
2.51 - j4.80
1.74 - j3.11
1960
2.31 - j4.54
1.67 - j2.85
1990
2.12 - j4.20
1.63 - j2.55
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19100NR1 MRF6S19100NBR1
8
RF Device Data
Freescale Semiconductor