MRF6S19100NR1 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
15.8
27
15.7
η_D
26.5
15.6
26
15.5
25.5
15.4
G_ps
V_DD = 28 Vdc, P_out = 22 W (Avg.), I_DQ = 950 mA
25
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
15.3
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
− 30
− 12
@ 0.01% Probability (CCDF)
15.2
− 36
− 16
15.1 ^IM3
IRL
15
14.9 _ACPR
− 42
− 20
− 24
− 48
− 28
− 54
− 32
14.8
− 60
− 36
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 22 Watts Avg.
15.4
36
15.3
η_D
35.5
15.2
15.1
G_ps
V_DD = 28 Vdc, P_out = 40 W (Avg.)
35
I_DQ = 950 mA, 2−Carrier N−CDMA
34.5
15
2.5 MHz Carrier Spacing
34
14.9
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
− 25
− 10
14.8 _IM3
14.7
IRL
14.6
14.5 _ACPR
− 30
− 15
− 35
− 20
− 25
− 40
− 30
− 45
− 35
14.4
− 50
− 40
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 40 Watts Avg.
17
16 _{1190 mA}
950 mA
15
710 mA
14
I_DQ = 1425 mA
13 475 mA
12
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
11
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
−20 Two−Tone Measurements, 2.5 MHz Tone Spacing
− 30
I_DQ = 475 mA
− 40
1425 mA
− 50
710 mA
950 mA
1190 mA
− 60
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
5