MRF6S19100NR1 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 330 μAdc)
V_GS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 950 mAdc)
V_GS(Q)
2
2.8
4
Vdc
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.3 Adc)
V_DS(on)
—
0.24
—
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2.2 Adc)
g_fs
—
5.3
—
S
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.5
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 950 mA, P_out = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
G_ps
13
14.5
16
dB
Drain Efficiency
η_D
24
25.5
36
%
Intermodulation Distortion
IM3
- 47
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
- 60
- 51
- 48
dBc
Input Return Loss
IRL
—
- 12
- 10
dB
1. Part is internally matched both on input and output.
MRF6S19100NR1 MRF6S19100NBR1
2
RF Device Data
Freescale Semiconductor