MRF6S18060NR1_08 Datasheet, PDF (8/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 1990 MHz
f = 1930 MHz
Z_source
f = 1990 MHz
f = 1930 MHz
Z_load
V_DD = 26 Vdc, I_DQ = 600 mA, P_out = 60 W CW
f
MHz
Z_source
Ω
Z_load
Ω
1930
8.00 - j6.48
2.83 - j5.13
1960
7.57 - j6.82
2.63 - j4.84
1990
7.06 - j7.06
2.44 - j4.54
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance — 1900 MHz
MRF6S18060NR1 MRF6S18060NBR1
8
RF Device Data
Freescale Semiconductor