MRF6S18060NR1_08 Datasheet, PDF (13/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 1880 MHz
f = 1805 MHz
Z_load
f = 1805 MHz
f = 1880 MHz Z_source
V_DD = 26 Vdc, I_DQ = 600 mA, P_out = 65 W CW
f
MHz
Z_source
Ω
Z_load
Ω
1805
4.16 - j7.56
3.29 - j4.91
1840
3.89 - j7.40
3.10 - j4.69
1880
3.56 - j7.21
2.88 - j4.45
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 25. Series Equivalent Source and Load Impedance — 1800 MHz
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
13