MRF6S18060NR1_08 Datasheet, PDF (12/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1800 MHz
−50
P_out = 35 W Avg.
−55
−60
25 W Avg.
−65
15 W Avg.
−70
35 W Avg.
−75
SR @ 400 kHz
25 W Avg. SR @ 600 kHz
10 W Avg.
V_DD = 26 Vdc
I_DQ = 450 mA
EDGE Modulation
−80
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
−45
−50
T_C = 25_C
−55
−60
−65
V_DD = 26 Vdc
−70
I_DQ = 450 mA
f = 1960 MHz
EDGE Modulation
−75
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 23. Spectral Regrowth at 400 kHz
versus Output Power
−60
−65
T_C = 25_C
−70
−75
V_DD = 26 Vdc
−80
I_DQ = 450 mA
f = 1960 MHz
EDGE Modulation
−85
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 24. Spectral Regrowth at 600 kHz
versus Output Power
MRF6S18060NR1 MRF6S18060NBR1
12
RF Device Data
Freescale Semiconductor