MRF6P27160H_08 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Z_o = 10 Ω
f = 2600 MHz
Z_load
f = 2700 MHz
Z_source
f = 2700 MHz
f = 2600 MHz
MRF6P27160HR6
8
V_DD = 28 Vdc, I_DQ = 1800 mA, P_out = 35 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2600
2610
2620
2630
2640
2645
2650
2660
2670
2680
2690
2700
6.90 + j0.61
6.85 + j0.63
6.76 + j0.59
6.50 + j0.59
6.13 + j0.56
5.95 + j0.69
5.81 + j0.83
5.61 + j1.15
5.69 + j1.48
5.91 + j1.67
6.12 + j1.68
6.17 + j1.60
5.24 + j2.46
5.69 + j2.04
5.71 + j1.59
5.62 + j1.48
5.45 + j1.42
5.38 + j1.49
5.31 + j1.58
5.24 + j1.81
5.45 + j2.09
5.84 + j2.22
6.22 + j2.12
6.49 + j1.92
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor