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MRF6P27160H_08 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor | |||
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TYPICAL CHARACTERISTICS
â10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA
TwoâTone Measurements
â20 (f1 + f2)/2 = Center Frequency of 2645 MHz
â30 3rd Order
5th Order
â40
â50
7th Order
â60
0.1
1
10
100
TWOâTONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
Ideal
57
P3dB = 54.32 dBm (270.33 W)
56
55
P1dB = 53.64 dBm (231.15 W)
54
53
Actual
52
VDD = 28 Vdc, IDQ = 1800 mA
51
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2645 MHz
50
34 35 36 37 38 39 40 41 42
Pin, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
35
â35
VDD = 28 Vdc, IDQ = 1800 mA, f = 2645 MHz
30 SingleâCarrier NâCDMA, 1.2288 MHz Channel
â40
Bandwidth, PAR = 9.8 dB @ 0.01%
25 Probability (CCDF)
â45
20
â50
Gps
15
â55
10
5 ηD
ALT1
ACPR
0
1
10
Pout, OUTPUT POWER (WATTS) AVG. WâCDMA
Figure 9. Single - Carrier N - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
â60
â65
â70
100
20
50
Gps
15
40
10
30
5
20
0
ηD
â5
0.1
1
VDD = 28 Vdc
IDQ = 1800 mA
10
f = 2645 MHz
0
10
100
400
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
16
15
14
13
32 V
12
28 V
VDD = 24 V
11
IDQ = 1800 mA
f = 2645 MHz
10
0
60
120
180
240
300
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6P27160HR6
6
RF Device Data
Freescale Semiconductor
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