MRF6P27160H_08 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
16
24
15.8
23
15.6
η_D 22
15.4
21
15.2 _{VDD = 28 Vdc, Pout = 35 W (Avg.),}
15 ^{IDQ = 1800 mA, N−CDMA IS−95 Pilot,}
G_ps
Sync, Paging, Traffic Codes 8 Through 13
14.8
20
IRL _−40
−10
−45
−11
14.6
ACPR
−50
−12
14.4
−55
−13
ALT1
14.2
−60
−14
14
−65
−15
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P_out = 35 Watts Avg.
15.2
15.1 G_ps
15
14.9 η_D
14.8
35
V_DD = 28 Vdc, P_out = 70 W (Avg.),
I_DQ = 1800 mA, N−CDMA IS−95 Pilot,
34
Sync, Paging, Traffic Codes 8 Through 13 ³³
32
31
14.7
30
14.6
14.5 _ACPR
14.4
14.3
ALT1
IRL ^−30
−10
−35
−11
−40
−12
−45
−13
14.2
−50
−14
14.1
−55
−15
14
−60
−16
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P_out = 70 Watts Avg.
17
I_DQ = 2700 mA
16
2250 mA
1800 mA
15
1350 mA
14
13 _{900 mA}
12
0.1
V_DD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
400
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−20
V_DD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
I_DQ = 900 mA
−40
2700 mA
−50
2250 mA
1800 mA
−60
1350 mA
0.1
1
10
100 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
5