MRF6P23190H_08 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

f = 2400 MHz
Z_source
f = 2300 MHz
Z_o = 50 Ω
f = 2400 MHz
Z_load
f = 2300 MHz
MRF6P23190HR6
8
V_DD = 28 Vdc, I_DQ = 1900 mA, P_out = 40 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2300
2310
2320
2330
2340
2350
2360
2370
2380
2390
2400
9.31 - j12.12
9.27 - j11.93
9.24 - j11.75
9.21 - j11.57
9.18 - j11.40
9.16 - j11.23
9.14 - j11.06
9.13 - j10.90
9.12 - j10.75
9.11 - j10.59
9.11 - j10.45
7.89 - j32.78
7.61 - j32.19
7.35 - j31.62
7.10 - j31.06
6.86 - j30.53
6.64 - j30.01
6.43 - j29.51
6.23 - j29.02
6.04 - j28.55
5.86 - j28.09
5.68 - j27.64
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor