MRF6P23190H_08 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
14.4
25
V_DD = 28 Vdc, P_out = 40 W (Avg.), I_DQ = 1900 mA
14.2 2−Carrier W−CDMA, 10 MHz Carrier Spacing
24
14 ^ηD
23
13.8
13.6 ^Gps
13.4 _IM3
13.2
13 ^ACPR
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IRL
22
−36
−13
−38
−15
−16
−40
−18
−42
−19
12.8
−44
−21
2270 2290 2310 2330 2350 2370 2390 2410 2430
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 40 Watts Avg.
14
35
V_DD = 28 Vdc, P_out = 80 W (Avg.), I_DQ = 1900 mA
13.8 2−Carrier W−CDMA, 10 MHz Carrier Spacing
34
13.6 ^ηD
32
13.4
13.2 G_ps
13 ^IM3
12.8
12.6 ^ACPR
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IRL
31
−26
−12
−28
−13
−15
−30
−16
−32
−18
12.4
−34
−19
2270 2290 2310 2330 2350 2370 2390 2410 2430
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 80 Watts Avg.
16
I_DQ = 2850 mA
15
2375 mA
14 _{1900 mA}
13 _{1425 mA}
12 _{950 mA}
11
V_DD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
0.5 1
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
−20 ^{Two−Tone Measurements, 10 MHz Tone Spacing}
−30
2850 mA
−40
I_DQ = 950 mA
−50
−60
1425 mA
2375 mA
1900 mA
−70
0.5 1
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
5