MRF6P23190H_08 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 190 W (PEP)
−10
I_DQ = 1900 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
−20
−30 3rd Order
−40 ^{5th Order}
−50 _{7th Order}
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
65
63
P6dB = 55.73 dBm (374.11 W)
Ideal
61
P3dB = 55.1 dBm (325.54 W)
59
57 ^{P1dB = 54.5 dBm (283.85 W)}
55
Actual
53
V_DD = 28 Vdc, I_DQ = 1900 mA
51
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
49
35
37
39
41
43
45
47
49
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
36
V_DD = 28 Vdc, I_DQ = 1900 mA
f1 = 2345 MHz, f2 = 2355 MHz
30 _{2−Carrier W−CDMA, 10 MHz Carrier}
Spacing, 3.84 MHz Channel
24 ^{Bandwidth, PAR = 8.5 dB @ 0.01%}
Probability (CCDF)
η_D
18 _{TC = −30_C}
G_ps
85_C ^−25
25_C
−30_C −30
85_C
25_C ^−35
−30_C
−40
12
IM3
6
25_C
85_C
−45
−50
ACPR
0
1
10
−55
100 200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
V_DD = 28 Vdc
16
I_DQ = 1900 mA
f = 2350 MHz
15
14
13
12
T_C = −30_C
G_ps
25_C
85_C
η_D
60
−30_C
50
85_C
40
30
20
10
11
0
1
10
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
15
I_DQ = 1900 mA
f = 2350 MHz
14
13
12
11
V_DD = 24 V _{28 V}
32 V
10
0
50
100
150
200
250
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6P23190HR6
6
RF Device Data
Freescale Semiconductor