MRF6P18190HR6 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 5 Ω
f = 1880 MHz
f = 1880 MHz
Z_source
Z_load
f = 1800 MHz
f = 1800 MHz
V_DD = 28 Vdc, I_DQ = 2000 mA, P_out = 44 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1800
1840
1880
3.70 + j1.71
3.40 + j2.75
3.19 + j3.88
3.70 + j2.49
3.55 + j3.29
3.45 + j4.12
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
+ Under
Test
−
Z _source
−
+
Z _load
Output
Matching
Network
Figure 15. Series Equivalent Source and Load Impedance
MRF6P18190HR6
8
RF Device Data
Freescale Semiconductor