MRF6P18190HR6 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
16.5
28.2
16.4
16.3
V_DD = 28 Vdc
P_out = 44 W (Avg.)
16.2 ^{IDQ = 2000 mA, 2−Carrier W−CDMA}
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
16.1 ^{PAR = 8.5 dB @ 0.01%}
Probability (CCDF)
16
G_ps
15.9
28
η_{D 27.8}
27.6
27.4
−34
−8
IM3
−36
−10
15.8
−38
−12
15.7
ACPR _−40
−14
15.6
−42
−16
15.5
IRL
−44
−18
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 44 Watts
15.8
40.4
15.7
G_ps
40
η_D
15.6
39.6
15.5
15.4
15.3
IRL
V_DD = 28 Vdc, P_out = 88 W (Avg.)
I_DQ = 2000 mA, 2−Carrier W−CDMA
39.2
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
−24
−8
@ 0.01% Probability (CCDF)
IM3
−26
−10
−12
15.2
−28
−14
15.1
ACPR −30
−16
15
−32
−18
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 88 Watts
17.5
17
I_DQ = 2600 mA
2300 mA
16.5
16
2000 mA
15.5
1700 mA
15
14.5
14
13.5
0.1
1400 mA
V_DD = 28 Vdc, f1 = 1837.5 MHz
f2 = 1847.5 MHz, Two−Tone
Measurements, 10 MHz Tone Spacing
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−30
V_DD = 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−35
I_DQ = 2600 mA
−40
−45
2300 mA
−50
1700 mA
2000 mA
1400 mA
−55
1
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P18190HR6
5